The study of ferroelectric thin films on silicon substrates
In recent years, intensive development of field-effect transistors on metal-ferroelectric-semiconductor for use, as non-volatile memory elements. The principle of operation of these devices is as follows. Ferroelectric film contains a large number of domains, having a certain vector of electric pola...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
JVE International
2013-03-01
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| Series: | Journal of Measurements in Engineering |
| Subjects: | |
| Online Access: | https://www.jvejournals.com/article/10004 |