The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response...

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Main Authors: Haoyang Cui, Yongpeng Xu, Junjie Yang, Naiyun Tang, Zhong Tang
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:The Scientific World Journal
Online Access:http://dx.doi.org/10.1155/2013/213091
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spelling doaj-09f183191cdb4795851114d64dba59dd2020-11-24T21:56:39ZengHindawi LimitedThe Scientific World Journal1537-744X2013-01-01201310.1155/2013/213091213091The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV DetectorHaoyang Cui0Yongpeng Xu1Junjie Yang2Naiyun Tang3Zhong Tang4School of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai 200090, ChinaSchool of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai 200090, ChinaSchool of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai 200090, ChinaSchool of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai 200090, ChinaSchool of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai 200090, ChinaThe transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.http://dx.doi.org/10.1155/2013/213091
collection DOAJ
language English
format Article
sources DOAJ
author Haoyang Cui
Yongpeng Xu
Junjie Yang
Naiyun Tang
Zhong Tang
spellingShingle Haoyang Cui
Yongpeng Xu
Junjie Yang
Naiyun Tang
Zhong Tang
The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
The Scientific World Journal
author_facet Haoyang Cui
Yongpeng Xu
Junjie Yang
Naiyun Tang
Zhong Tang
author_sort Haoyang Cui
title The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_short The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_full The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_fullStr The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_full_unstemmed The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector
title_sort effect of metal-semiconductor contact on the transient photovoltaic characteristic of hgcdte pv detector
publisher Hindawi Limited
series The Scientific World Journal
issn 1537-744X
publishDate 2013-01-01
description The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.
url http://dx.doi.org/10.1155/2013/213091
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