| Summary: | In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009. In this paper, we propose a 3D trench electrode Si detector with adjustable central collection electrode, which integrates advantages of cylindrical units and parallel units. For those combined units, we use 1D Poisson equation as the first order approximation to study the changing of depletion in different regions. These results have been compared to those obtained from the full 3D simulation using a 3D-TCAD tool. According to calculations, we design a 3D trench electrode Si detector with adjustable central collection electrode. Furthermore, electrical characteristics of this type of detectors with different lengths of central collection electrode (lp+) have been simulated using the 3D-TCAD. Regarded as the main factor of signal-noise ratio, the geometric capacitance obtained from Silvaco TCAD simulations is compared with which is calculated by physical models when detectors size varies. Finally, the physic model of charge collection is established using Ramo theorem. The CCE (Charge Collection Efficiency) of detector unit is studied with this model (after Φ=1016 neq/cm2, average CCE is 38%).
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