Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films

Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The cry...

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Main Authors: Seungjun Oh, Tadashi Morita, Tomoki Ikeda, Masakiyo Tsunoda, Mikihiko Oogane, Yasuo Ando
Format: Article
Language:English
Published: AIP Publishing LLC 2019-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5079688
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spelling doaj-09866ff3c16c412c863737feddb304c32020-11-25T00:28:29ZengAIP Publishing LLCAIP Advances2158-32262019-03-0193035109035109-410.1063/1.5079688014992ADVControlled growth and magnetic property of a-plane-oriented Mn3Sn thin filmsSeungjun Oh0Tadashi Morita1Tomoki Ikeda2Masakiyo Tsunoda3Mikihiko Oogane4Yasuo Ando5Future Technology Research Laboratory, ULVAC, Inc., Tsukuba 300-2635, JapanFuture Technology Research Laboratory, ULVAC, Inc., Tsukuba 300-2635, JapanDepartment of Applied Physics, Tohoku University, Sendai 980-8579, JapanDepartment of Electronic Engineering, Tohoku University, Sendai 980-8579, JapanDepartment of Applied Physics, Tohoku University, Sendai 980-8579, JapanDepartment of Applied Physics, Tohoku University, Sendai 980-8579, JapanHighly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.http://dx.doi.org/10.1063/1.5079688
collection DOAJ
language English
format Article
sources DOAJ
author Seungjun Oh
Tadashi Morita
Tomoki Ikeda
Masakiyo Tsunoda
Mikihiko Oogane
Yasuo Ando
spellingShingle Seungjun Oh
Tadashi Morita
Tomoki Ikeda
Masakiyo Tsunoda
Mikihiko Oogane
Yasuo Ando
Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
AIP Advances
author_facet Seungjun Oh
Tadashi Morita
Tomoki Ikeda
Masakiyo Tsunoda
Mikihiko Oogane
Yasuo Ando
author_sort Seungjun Oh
title Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
title_short Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
title_full Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
title_fullStr Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
title_full_unstemmed Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
title_sort controlled growth and magnetic property of a-plane-oriented mn3sn thin films
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-03-01
description Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.
url http://dx.doi.org/10.1063/1.5079688
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