The Strain Rate Sensitivity and Creep Behavior for the Tripler Plane of Potassium Dihydrogen Phosphate Crystal by Nanoindentation

As an excellent multifunctional single crystal, potassium dihydrogen phosphate (KDP) is a well-known, difficult-to-process material for its soft-brittle and deliquescent nature. The surface mechanical properties are critical to the machining process; however, the characteristics of deformation behav...

Full description

Bibliographic Details
Main Authors: Jianhui Mao, Wenjun Liu, Dongfang Li, Chenkai Zhang, Yi Ma
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
KDP
Online Access:https://www.mdpi.com/2072-666X/12/4/369
Description
Summary:As an excellent multifunctional single crystal, potassium dihydrogen phosphate (KDP) is a well-known, difficult-to-process material for its soft-brittle and deliquescent nature. The surface mechanical properties are critical to the machining process; however, the characteristics of deformation behavior for KDP crystals have not been well studied. In this work, the strain rate effect on hardness was investigated on the mechanically polished tripler plane of a KDP crystal relying on nanoindentation technology. By increasing the strain rate from 0.001 to 0.1 s<sup>−1</sup>, hardness increased from 1.67 to 2.07 GPa. Hence, the strain rate sensitivity was determined as 0.053, and the activation volume of dislocation nucleation was 169 Å<sup>3</sup>. Based on the constant load-holding method, creep deformation was studied at various holding depths at room temperature. Under the spherical tip, creep deformation could be greatly enhanced with increasing holding depth, which was mainly due to the enlarged holding strain. Under the self-similar Berkovich indenter, creep strain could be reduced at a deeper location. Such an indentation size effect on creep deformation was firstly reported for KDP crystals. The strain rate sensitivity of the steady-state creep flow was estimated, and the creep mechanism was qualitatively discussed.
ISSN:2072-666X