Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O&#x2082; Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O&#x2082; Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based metal-ferroelectric-metal capacitors, which offers significant ad...

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Bibliographic Details
Main Authors: Hao Jiang, Owen Li, Wenliang Chen, T. P. Ma
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nonvolatile SRAM
ferroelectric capacitor
selector-free
3D cross-point memory
Online Access:https://ieeexplore.ieee.org/document/9174932/

Internet

https://ieeexplore.ieee.org/document/9174932/

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