Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

• Main Authors: Aditya Prabaswara, Jung-Wook Min, Chao Zhao, Bilal Janjua, Daliang Zhang, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi
• Format: Article
• Language: English
• Published: SpringerOpen 2018-02-01
• Series: Nanoscale Research Letters
• Subjects: Nanowires; True yellow; Gallium nitride; Amorphous quartz; Light-emitting diodes
• Online Access: http://link.springer.com/article/10.1186/s11671-018-2453-1
• ISSN: 1931-7573; 1556-276X

Abstract Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.