Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

Abstract Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge o...

Full description

Bibliographic Details
Main Authors: Aditya Prabaswara, Jung-Wook Min, Chao Zhao, Bilal Janjua, Daliang Zhang, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi
Format: Article
Language:English
Published: SpringerOpen 2018-02-01
Series:Nanoscale Research Letters
Subjects:
Nanowires
True yellow
Gallium nitride
Amorphous quartz
Light-emitting diodes
Online Access:http://link.springer.com/article/10.1186/s11671-018-2453-1

Internet

http://link.springer.com/article/10.1186/s11671-018-2453-1

Similar Items