Exposure of AlN and Al2O3 to low energy D and He plasmas

Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was det...

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Main Authors: M.I. Patino, R.P. Doerner, G.R. Tynan
Format: Article
Language:English
Published: Elsevier 2020-05-01
Series:Nuclear Materials and Energy
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352179120300296
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spelling doaj-060d757fe51245f0bd61dcb9077b7f872020-11-25T02:39:15ZengElsevierNuclear Materials and Energy2352-17912020-05-0123Exposure of AlN and Al2O3 to low energy D and He plasmasM.I. Patino0R.P. Doerner1G.R. Tynan2Corresponding author.; Center for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USACenter for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USACenter for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USAAluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al2O3 samples exposed to pure D or He. Results suggest AlN and Al2O3 are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows).http://www.sciencedirect.com/science/article/pii/S2352179120300296Aluminum nitrideAluminum oxideDeuteriumHeliumPreferential sputtering
collection DOAJ
language English
format Article
sources DOAJ
author M.I. Patino
R.P. Doerner
G.R. Tynan
spellingShingle M.I. Patino
R.P. Doerner
G.R. Tynan
Exposure of AlN and Al2O3 to low energy D and He plasmas
Nuclear Materials and Energy
Aluminum nitride
Aluminum oxide
Deuterium
Helium
Preferential sputtering
author_facet M.I. Patino
R.P. Doerner
G.R. Tynan
author_sort M.I. Patino
title Exposure of AlN and Al2O3 to low energy D and He plasmas
title_short Exposure of AlN and Al2O3 to low energy D and He plasmas
title_full Exposure of AlN and Al2O3 to low energy D and He plasmas
title_fullStr Exposure of AlN and Al2O3 to low energy D and He plasmas
title_full_unstemmed Exposure of AlN and Al2O3 to low energy D and He plasmas
title_sort exposure of aln and al2o3 to low energy d and he plasmas
publisher Elsevier
series Nuclear Materials and Energy
issn 2352-1791
publishDate 2020-05-01
description Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al2O3 samples exposed to pure D or He. Results suggest AlN and Al2O3 are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows).
topic Aluminum nitride
Aluminum oxide
Deuterium
Helium
Preferential sputtering
url http://www.sciencedirect.com/science/article/pii/S2352179120300296
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AT rpdoerner exposureofalnandal2o3tolowenergydandheplasmas
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