Exposure of AlN and Al2O3 to low energy D and He plasmas
Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was det...
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doaj-060d757fe51245f0bd61dcb9077b7f872020-11-25T02:39:15ZengElsevierNuclear Materials and Energy2352-17912020-05-0123Exposure of AlN and Al2O3 to low energy D and He plasmasM.I. Patino0R.P. Doerner1G.R. Tynan2Corresponding author.; Center for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USACenter for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USACenter for Energy Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0417, USAAluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al2O3 samples exposed to pure D or He. Results suggest AlN and Al2O3 are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows).http://www.sciencedirect.com/science/article/pii/S2352179120300296Aluminum nitrideAluminum oxideDeuteriumHeliumPreferential sputtering |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
M.I. Patino R.P. Doerner G.R. Tynan |
spellingShingle |
M.I. Patino R.P. Doerner G.R. Tynan Exposure of AlN and Al2O3 to low energy D and He plasmas Nuclear Materials and Energy Aluminum nitride Aluminum oxide Deuterium Helium Preferential sputtering |
author_facet |
M.I. Patino R.P. Doerner G.R. Tynan |
author_sort |
M.I. Patino |
title |
Exposure of AlN and Al2O3 to low energy D and He plasmas |
title_short |
Exposure of AlN and Al2O3 to low energy D and He plasmas |
title_full |
Exposure of AlN and Al2O3 to low energy D and He plasmas |
title_fullStr |
Exposure of AlN and Al2O3 to low energy D and He plasmas |
title_full_unstemmed |
Exposure of AlN and Al2O3 to low energy D and He plasmas |
title_sort |
exposure of aln and al2o3 to low energy d and he plasmas |
publisher |
Elsevier |
series |
Nuclear Materials and Energy |
issn |
2352-1791 |
publishDate |
2020-05-01 |
description |
Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al2O3 samples exposed to pure D or He. Results suggest AlN and Al2O3 are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows). |
topic |
Aluminum nitride Aluminum oxide Deuterium Helium Preferential sputtering |
url |
http://www.sciencedirect.com/science/article/pii/S2352179120300296 |
work_keys_str_mv |
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