An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device....

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Bibliographic Details
Main Authors: Chih-Yao Chang, Yi-Chen Li, Kailin Ren, Yung C. Liang, Chih-Fang Huang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
HEMT
light emitting devices
two-dimensional electron gas
Online Access:https://ieeexplore.ieee.org/document/9044337/
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spelling doaj-060334b97ce9420084625ed4e1a056c12021-03-29T18:51:01ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01834634910.1109/JEDS.2020.29824269044337An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and HolesChih-Yao Chang0https://orcid.org/0000-0003-3534-085XYi-Chen Li1Kailin Ren2Yung C. Liang3https://orcid.org/0000-0002-5716-0713Chih-Fang Huang4https://orcid.org/0000-0002-1421-9789Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, SingaporeInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanThis paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.https://ieeexplore.ieee.org/document/9044337/GaNHEMTlight emitting devicestwo-dimensional electron gas
collection DOAJ
language English
format Article
sources DOAJ
author Chih-Yao Chang
Yi-Chen Li
Kailin Ren
Yung C. Liang
Chih-Fang Huang
spellingShingle Chih-Yao Chang
Yi-Chen Li
Kailin Ren
Yung C. Liang
Chih-Fang Huang
An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
IEEE Journal of the Electron Devices Society
GaN
HEMT
light emitting devices
two-dimensional electron gas
author_facet Chih-Yao Chang
Yi-Chen Li
Kailin Ren
Yung C. Liang
Chih-Fang Huang
author_sort Chih-Yao Chang
title An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
title_short An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
title_full An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
title_fullStr An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
title_full_unstemmed An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes
title_sort algan/gan high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2020-01-01
description This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.
topic GaN
HEMT
light emitting devices
two-dimensional electron gas
url https://ieeexplore.ieee.org/document/9044337/
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