An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional Electron Gas and Holes

This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device....

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Bibliographic Details
Main Authors: Chih-Yao Chang, Yi-Chen Li, Kailin Ren, Yung C. Liang, Chih-Fang Huang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
HEMT
light emitting devices
two-dimensional electron gas
Online Access:https://ieeexplore.ieee.org/document/9044337/
Description
Summary:This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.
ISSN:2168-6734

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