The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from...
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Universitas Syiah Kuala
2014-07-01
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doaj-04e3d73151344ce5bf421925445a86782020-11-25T00:35:57ZengUniversitas Syiah KualaJurnal Natural1411-85132541-40622014-07-011411447The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin FilmsMursal MursalIrhamni IrhamniT WinataThe effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Mursal Mursal Irhamni Irhamni T Winata |
spellingShingle |
Mursal Mursal Irhamni Irhamni T Winata The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films Jurnal Natural |
author_facet |
Mursal Mursal Irhamni Irhamni T Winata |
author_sort |
Mursal Mursal |
title |
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
title_short |
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
title_full |
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
title_fullStr |
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
title_full_unstemmed |
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
title_sort |
effect of ge content on the optical and electrical properties of a-sige: h thin films |
publisher |
Universitas Syiah Kuala |
series |
Jurnal Natural |
issn |
1411-8513 2541-4062 |
publishDate |
2014-07-01 |
description |
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content. |
url |
http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
work_keys_str_mv |
AT mursalmursal theeffectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms AT irhamniirhamni theeffectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms AT twinata theeffectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms AT mursalmursal effectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms AT irhamniirhamni effectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms AT twinata effectofgecontentontheopticalandelectricalpropertiesofasigehthinfilms |
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1725306836895137792 |