The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from...

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Main Authors: Mursal Mursal, Irhamni Irhamni, T Winata
Format: Article
Language:English
Published: Universitas Syiah Kuala 2014-07-01
Series:Jurnal Natural
Online Access:http://www.jurnal.unsyiah.ac.id/natural/article/view/1518
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spelling doaj-04e3d73151344ce5bf421925445a86782020-11-25T00:35:57ZengUniversitas Syiah KualaJurnal Natural1411-85132541-40622014-07-011411447The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin FilmsMursal MursalIrhamni IrhamniT WinataThe effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.http://www.jurnal.unsyiah.ac.id/natural/article/view/1518
collection DOAJ
language English
format Article
sources DOAJ
author Mursal Mursal
Irhamni Irhamni
T Winata
spellingShingle Mursal Mursal
Irhamni Irhamni
T Winata
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
Jurnal Natural
author_facet Mursal Mursal
Irhamni Irhamni
T Winata
author_sort Mursal Mursal
title The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
title_short The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
title_full The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
title_fullStr The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
title_full_unstemmed The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
title_sort effect of ge content on the optical and electrical properties of a-sige: h thin films
publisher Universitas Syiah Kuala
series Jurnal Natural
issn 1411-8513
2541-4062
publishDate 2014-07-01
description The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.
url http://www.jurnal.unsyiah.ac.id/natural/article/view/1518
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