The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universitas Syiah Kuala
2014-07-01
|
| Series: | Jurnal Natural |
| Online Access: | http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
| Summary: | The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content. |
|---|---|
| ISSN: | 1411-8513 2541-4062 |