Low temperature CVD growth of ultrathin carbon films

Low temperature CVD growth of ultrathin carbon films

We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC o...

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Main Authors: Chao Yang, Peng Wu, Wei Gan, Muhammad Habib, Weiyu Xu, Qi Fang, Li Song
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4949755
id doaj-04374d530a2748d6b947182a9fe4f202
record_format Article
spelling doaj-04374d530a2748d6b947182a9fe4f2022020-11-24T22:58:27ZengAIP Publishing LLCAIP Advances2158-32262016-05-0165055310055310-510.1063/1.4949755036605ADVLow temperature CVD growth of ultrathin carbon filmsChao Yang0Peng Wu1Wei Gan2Muhammad Habib3Weiyu Xu4Qi Fang5Li Song6National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaWe demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC) used in several device processing technologies.http://dx.doi.org/10.1063/1.4949755
collection DOAJ
language English
format Article
sources DOAJ
author Chao Yang
Peng Wu
Wei Gan
Muhammad Habib
Weiyu Xu
Qi Fang
Li Song
spellingShingle Chao Yang
Peng Wu
Wei Gan
Muhammad Habib
Weiyu Xu
Qi Fang
Li Song
Low temperature CVD growth of ultrathin carbon films
AIP Advances
author_facet Chao Yang
Peng Wu
Wei Gan
Muhammad Habib
Weiyu Xu
Qi Fang
Li Song
author_sort Chao Yang
title Low temperature CVD growth of ultrathin carbon films
title_short Low temperature CVD growth of ultrathin carbon films
title_full Low temperature CVD growth of ultrathin carbon films
title_fullStr Low temperature CVD growth of ultrathin carbon films
title_full_unstemmed Low temperature CVD growth of ultrathin carbon films
title_sort low temperature cvd growth of ultrathin carbon films
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-05-01
description We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC) used in several device processing technologies.
url http://dx.doi.org/10.1063/1.4949755
work_keys_str_mv AT chaoyang lowtemperaturecvdgrowthofultrathincarbonfilms
AT pengwu lowtemperaturecvdgrowthofultrathincarbonfilms
AT weigan lowtemperaturecvdgrowthofultrathincarbonfilms
AT muhammadhabib lowtemperaturecvdgrowthofultrathincarbonfilms
AT weiyuxu lowtemperaturecvdgrowthofultrathincarbonfilms
AT qifang lowtemperaturecvdgrowthofultrathincarbonfilms
AT lisong lowtemperaturecvdgrowthofultrathincarbonfilms
_version_ 1725647044359487488

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