Gallium arsenide p+–n–p+-structures with impoverished base area
It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination curr...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2009-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2009/3_2009/pdf/08.zip |