CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switc...
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Online Access: | http://www.mdpi.com/2072-666X/7/2/30 |
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doaj-03b4c706c6474ae5923e3e026ca45e152020-11-24T23:48:08ZengMDPI AGMicromachines2072-666X2016-02-01723010.3390/mi7020030mi7020030CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS TechnologyJose Luis Muñoz-Gamarra0Arantxa Uranga1Nuria Barniol2Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, SpainDepartment of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, SpainDepartment of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, SpainThis work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.http://www.mdpi.com/2072-666X/7/2/30CMOS-NEMSNEMSNEMS switchcopper switch |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jose Luis Muñoz-Gamarra Arantxa Uranga Nuria Barniol |
spellingShingle |
Jose Luis Muñoz-Gamarra Arantxa Uranga Nuria Barniol CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology Micromachines CMOS-NEMS NEMS NEMS switch copper switch |
author_facet |
Jose Luis Muñoz-Gamarra Arantxa Uranga Nuria Barniol |
author_sort |
Jose Luis Muñoz-Gamarra |
title |
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology |
title_short |
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology |
title_full |
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology |
title_fullStr |
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology |
title_full_unstemmed |
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology |
title_sort |
cmos-nems copper switches monolithically integrated using a 65 nm cmos technology |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2016-02-01 |
description |
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach. |
topic |
CMOS-NEMS NEMS NEMS switch copper switch |
url |
http://www.mdpi.com/2072-666X/7/2/30 |
work_keys_str_mv |
AT joseluismunozgamarra cmosnemscopperswitchesmonolithicallyintegratedusinga65nmcmostechnology AT arantxauranga cmosnemscopperswitchesmonolithicallyintegratedusinga65nmcmostechnology AT nuriabarniol cmosnemscopperswitchesmonolithicallyintegratedusinga65nmcmostechnology |
_version_ |
1725487020696928256 |