Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations
Molecular dynamic (MD) simulations were used to study threshold displacement energy (TDE) surface and Si displacement cascades in 4H-SiC system. To figure out the role of different Wyckoff sites in determining the TDE values, both Si and C atoms in 2a and 2b Wyckoff sites were separately considered...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5093576 |