The features of modelling semiconductor lasers with a wide contact

The features of modelling semiconductor lasers with a wide contact

The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semic...

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Bibliographic Details
Main Author: Rzhanov Alexey
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:EPJ Web of Conferences
Online Access:https://doi.org/10.1051/epjconf/201716102022
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spelling doaj-039a58694769425e8ed437c5968c73bd2021-08-02T11:07:47ZengEDP SciencesEPJ Web of Conferences2100-014X2017-01-011610202210.1051/epjconf/201716102022epjconf_pecs2017_02022The features of modelling semiconductor lasers with a wide contactRzhanov AlexeyThe aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.https://doi.org/10.1051/epjconf/201716102022
collection DOAJ
language English
format Article
sources DOAJ
author Rzhanov Alexey
spellingShingle Rzhanov Alexey
The features of modelling semiconductor lasers with a wide contact
EPJ Web of Conferences
author_facet Rzhanov Alexey
author_sort Rzhanov Alexey
title The features of modelling semiconductor lasers with a wide contact
title_short The features of modelling semiconductor lasers with a wide contact
title_full The features of modelling semiconductor lasers with a wide contact
title_fullStr The features of modelling semiconductor lasers with a wide contact
title_full_unstemmed The features of modelling semiconductor lasers with a wide contact
title_sort features of modelling semiconductor lasers with a wide contact
publisher EDP Sciences
series EPJ Web of Conferences
issn 2100-014X
publishDate 2017-01-01
description The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.
url https://doi.org/10.1051/epjconf/201716102022
work_keys_str_mv AT rzhanovalexey thefeaturesofmodellingsemiconductorlaserswithawidecontact
AT rzhanovalexey featuresofmodellingsemiconductorlaserswithawidecontact
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