The features of modelling semiconductor lasers with a wide contact

The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semic...

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Bibliographic Details
Main Author: Rzhanov Alexey
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:EPJ Web of Conferences
Online Access:https://doi.org/10.1051/epjconf/201716102022
Description
Summary:The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.
ISSN:2100-014X