Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The v...

Full description

Bibliographic Details
Main Authors: Ching-Hsiu Chen, Assamen Ayalew Ejigu, Liang-Chiun Chao
Format: Article
Language:English
Published: Hindawi Limited 2018-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2018/3792672
id doaj-033e9068a0a744be80dcd4cb96f717da
record_format Article
spelling doaj-033e9068a0a744be80dcd4cb96f717da2020-11-25T01:17:17ZengHindawi LimitedAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/37926723792672Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter DepositionChing-Hsiu Chen0Assamen Ayalew Ejigu1Liang-Chiun Chao2Graduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, TaiwanGraduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, TaiwanGraduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, TaiwanCu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.http://dx.doi.org/10.1155/2018/3792672
collection DOAJ
language English
format Article
sources DOAJ
author Ching-Hsiu Chen
Assamen Ayalew Ejigu
Liang-Chiun Chao
spellingShingle Ching-Hsiu Chen
Assamen Ayalew Ejigu
Liang-Chiun Chao
Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
Advances in Materials Science and Engineering
author_facet Ching-Hsiu Chen
Assamen Ayalew Ejigu
Liang-Chiun Chao
author_sort Ching-Hsiu Chen
title Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
title_short Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
title_full Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
title_fullStr Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
title_full_unstemmed Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition
title_sort stable cu2o photoelectrodes by reactive ion beam sputter deposition
publisher Hindawi Limited
series Advances in Materials Science and Engineering
issn 1687-8434
1687-8442
publishDate 2018-01-01
description Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.
url http://dx.doi.org/10.1155/2018/3792672
work_keys_str_mv AT chinghsiuchen stablecu2ophotoelectrodesbyreactiveionbeamsputterdeposition
AT assamenayalewejigu stablecu2ophotoelectrodesbyreactiveionbeamsputterdeposition
AT liangchiunchao stablecu2ophotoelectrodesbyreactiveionbeamsputterdeposition
_version_ 1725146865047961600

Similar Items