Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO<sub>2</sub>/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top e...

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Bibliographic Details
Main Authors:	Xiaofeng Zhao, Yi Li, Chunpeng Ai, Dianzhong Wen
Format:	Article
Language:	English
Published:	MDPI AG 2019-04-01
Series:	Materials
Subjects:	Pt/Ag/ZnO:Li/Pt/Ti memory device Li-doped ZnO thin films resistive switching characteristics magnetron sputtering
Online Access:	https://www.mdpi.com/1996-1944/12/8/1282

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