Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W...

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Main Authors:	Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen, Jun He
Format:	Article
Language:	English
Published:	Nature Publishing Group 2019-09-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-019-12200-x

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spelling	doaj-02705021ecec4a0f921a7924000cf0602021-05-11T11:51:26ZengNature Publishing GroupNature Communications2041-17232019-09-011011810.1038/s41467-019-12200-xRobust trap effect in transition metal dichalcogenides for advanced multifunctional devicesLei Yin0Peng He1Ruiqing Cheng2Feng Wang3Fengmei Wang4Zhenxing Wang5Yao Wen6Jun He7CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyCAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and TechnologyUtilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.https://doi.org/10.1038/s41467-019-12200-x
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He
spellingShingle	Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices Nature Communications
author_facet	Lei Yin Peng He Ruiqing Cheng Feng Wang Fengmei Wang Zhenxing Wang Yao Wen Jun He
author_sort	Lei Yin
title	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_short	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_full	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_fullStr	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_full_unstemmed	Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
title_sort	robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2019-09-01
description	Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.
url	https://doi.org/10.1038/s41467-019-12200-x
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Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

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