Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W...

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Bibliographic Details
Main Authors: Lei Yin, Peng He, Ruiqing Cheng, Feng Wang, Fengmei Wang, Zhenxing Wang, Yao Wen, Jun He
Format: Article
Language:English
Published: Nature Publishing Group 2019-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-12200-x
Description
Summary:Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.
ISSN:2041-1723

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