III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz
We review Ill-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AIGaN-based avalanche photodiodes, single phot...
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2011-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/5772683/ |
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doaj-02515b8f398948b8935099a1aee9d2822021-03-29T17:05:23ZengIEEEIEEE Photonics Journal1943-06552011-01-013226326710.1109/JPHOT.2011.21353405772683III-Nitride Optoelectronic Devices: From Ultraviolet Toward TerahertzM. Razeghi0Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, USAWe review Ill-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AIGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AIGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in Ill-Nitride optoelectronic devices.https://ieeexplore.ieee.org/document/5772683/III-NitridesAlGaInNAlGaNInGaNAlGaN/GaNultraviolet |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
M. Razeghi |
| spellingShingle |
M. Razeghi III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz IEEE Photonics Journal III-Nitrides AlGaInN AlGaN InGaN AlGaN/GaN ultraviolet |
| author_facet |
M. Razeghi |
| author_sort |
M. Razeghi |
| title |
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz |
| title_short |
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz |
| title_full |
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz |
| title_fullStr |
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz |
| title_full_unstemmed |
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz |
| title_sort |
iii-nitride optoelectronic devices: from ultraviolet toward terahertz |
| publisher |
IEEE |
| series |
IEEE Photonics Journal |
| issn |
1943-0655 |
| publishDate |
2011-01-01 |
| description |
We review Ill-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AIGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AIGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in Ill-Nitride optoelectronic devices. |
| topic |
III-Nitrides AlGaInN AlGaN InGaN AlGaN/GaN ultraviolet |
| url |
https://ieeexplore.ieee.org/document/5772683/ |
| work_keys_str_mv |
AT mrazeghi iiinitrideoptoelectronicdevicesfromultraviolettowardterahertz |
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1724198260062552064 |