Modification of transition's factor in the compact surface-potential-based MOSFET model

• Main Authors: Kevkić Tijana, Stojanović Vladica, Petković Dragan
• Format: Article
• Language: English
• Published: University of Priština - Faculty of Natural Science and Mathematics, Kosovska Mitrovica 2016-01-01
• Series: The University Thought: Publication in Natural Sciences
• Subjects: MOSFET modeling; generalized logistic functions; surface potential; quantum mechanical effects
• Online Access: http://scindeks-clanci.ceon.rs/data/pdf/1450-7226/2016/1450-72261602055K.pdf

The modification of an important transition's factor which enables continual behavior of the surface potential in entire useful range of MOSFET operation is presented. The various modifications have been made in order to obtain an accurate and computationally efficient compact MOSFET model. The best results have been achieved by introducing the generalized logistic function (GL) in fitting of considered factor. The smoothness and speed of the transition of the surface potential from the depletion to the strong inversion region can be controlled in this way. The results of the explicit model with this GL functional form for transition's factor have been verified extensively with the numerical data. A great agreement was found for a wide range of substrate doping and oxide thickness. Moreover, the proposed approach can be also applied on the case where quantum mechanical effects play important role in inversion mode.