Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier

Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier

The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quantum barrier (LQB) instead of the bulk GaN LQB in an...

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Main Authors: Tian Lan, Guangzheng Zhou, Ying Li, Congcong Wang, Zhiyong Wang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Asymmetric GaN LD
efficiency droop
hole overflow
wall-plug efficiency
Online Access:https://ieeexplore.ieee.org/document/8515048/
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spelling doaj-01a59d86e90f43189ea875cf99f95c642021-03-29T17:52:39ZengIEEEIEEE Photonics Journal1943-06552018-01-011061810.1109/JPHOT.2018.28784438515048Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum BarrierTian Lan0Guangzheng Zhou1Ying Li2Congcong Wang3Zhiyong Wang4https://orcid.org/0000-0002-8751-9432Institute of Laser Engineering, Beijing University of Technology, Beijing, ChinaInstitute of Laser Engineering, Beijing University of Technology, Beijing, ChinaInstitute of Laser Engineering, Beijing University of Technology, Beijing, ChinaInstitute of Laser Engineering, Beijing University of Technology, Beijing, ChinaInstitute of Laser Engineering, Beijing University of Technology, Beijing, ChinaThe phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quantum barrier (LQB) instead of the bulk GaN LQB in an asymmetric GaN-based high-power blue LD, the efficiency droop is effectively mitigated to only 9.7% under continuous-wave operation with no degradation in the crystal quality. Compared with the conventional asymmetric GaN-based LD, the wall-plug efficiency is successfully increased by 24.7% from 15.8% to 19.7% at high injection current of 2000 mA, promoting the increase of slope efficiency and output power, while the threshold current is reduced by 15.2%. These improvements are primarily attributed to the inserted high-quality InAlN thin barrier layer, which could form an extra potential barrier beneath the first InGaN quantum well to remarkably alleviate the hole overflow from the active region and enhance the radiative recombination rate.https://ieeexplore.ieee.org/document/8515048/Asymmetric GaN LDefficiency droophole overflowwall-plug efficiency
collection DOAJ
language English
format Article
sources DOAJ
author Tian Lan
Guangzheng Zhou
Ying Li
Congcong Wang
Zhiyong Wang
spellingShingle Tian Lan
Guangzheng Zhou
Ying Li
Congcong Wang
Zhiyong Wang
Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
IEEE Photonics Journal
Asymmetric GaN LD
efficiency droop
hole overflow
wall-plug efficiency
author_facet Tian Lan
Guangzheng Zhou
Ying Li
Congcong Wang
Zhiyong Wang
author_sort Tian Lan
title Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
title_short Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
title_full Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
title_fullStr Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
title_full_unstemmed Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
title_sort mitigation of efficiency droop in an asymmetric gan-based high-power laser diode with sandwiched gan/inaln/gan lower quantum barrier
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2018-01-01
description The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quantum barrier (LQB) instead of the bulk GaN LQB in an asymmetric GaN-based high-power blue LD, the efficiency droop is effectively mitigated to only 9.7% under continuous-wave operation with no degradation in the crystal quality. Compared with the conventional asymmetric GaN-based LD, the wall-plug efficiency is successfully increased by 24.7% from 15.8% to 19.7% at high injection current of 2000 mA, promoting the increase of slope efficiency and output power, while the threshold current is reduced by 15.2%. These improvements are primarily attributed to the inserted high-quality InAlN thin barrier layer, which could form an extra potential barrier beneath the first InGaN quantum well to remarkably alleviate the hole overflow from the active region and enhance the radiative recombination rate.
topic Asymmetric GaN LD
efficiency droop
hole overflow
wall-plug efficiency
url https://ieeexplore.ieee.org/document/8515048/
work_keys_str_mv AT tianlan mitigationofefficiencydroopinanasymmetricganbasedhighpowerlaserdiodewithsandwichedganx002finalnx002fganlowerquantumbarrier
AT guangzhengzhou mitigationofefficiencydroopinanasymmetricganbasedhighpowerlaserdiodewithsandwichedganx002finalnx002fganlowerquantumbarrier
AT yingli mitigationofefficiencydroopinanasymmetricganbasedhighpowerlaserdiodewithsandwichedganx002finalnx002fganlowerquantumbarrier
AT congcongwang mitigationofefficiencydroopinanasymmetricganbasedhighpowerlaserdiodewithsandwichedganx002finalnx002fganlowerquantumbarrier
AT zhiyongwang mitigationofefficiencydroopinanasymmetricganbasedhighpowerlaserdiodewithsandwichedganx002finalnx002fganlowerquantumbarrier
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