Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visi...

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Main Authors: Juwon Lee, Ganapathi Subramaniam Nagarajan, Yoon Shon, Younghae Kwon, Tae Won Kang, Deuk Yong Kim, Hyungsang Kim, Hyunsik Im, Chang-Soo Park, Eun Kyu Kim
Format: Article
Language:English
Published: AIP Publishing LLC 2017-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4994044
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spelling doaj-01548aa9725a4abd83f876bfe28cb88a2020-11-24T21:08:52ZengAIP Publishing LLCAIP Advances2158-32262017-08-0178085114085114-810.1063/1.4994044021707ADVRoom temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductorJuwon Lee0Ganapathi Subramaniam Nagarajan1Yoon Shon2Younghae Kwon3Tae Won Kang4Deuk Yong Kim5Hyungsang Kim6Hyunsik Im7Chang-Soo Park8Eun Kyu Kim9Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaQuantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaQuantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaQuantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaQuantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaQuantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of KoreaDivision of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of KoreaDivision of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of KoreaQuantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of KoreaQuantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of KoreaBismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.http://dx.doi.org/10.1063/1.4994044
collection DOAJ
language English
format Article
sources DOAJ
author Juwon Lee
Ganapathi Subramaniam Nagarajan
Yoon Shon
Younghae Kwon
Tae Won Kang
Deuk Yong Kim
Hyungsang Kim
Hyunsik Im
Chang-Soo Park
Eun Kyu Kim
spellingShingle Juwon Lee
Ganapathi Subramaniam Nagarajan
Yoon Shon
Younghae Kwon
Tae Won Kang
Deuk Yong Kim
Hyungsang Kim
Hyunsik Im
Chang-Soo Park
Eun Kyu Kim
Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
AIP Advances
author_facet Juwon Lee
Ganapathi Subramaniam Nagarajan
Yoon Shon
Younghae Kwon
Tae Won Kang
Deuk Yong Kim
Hyungsang Kim
Hyunsik Im
Chang-Soo Park
Eun Kyu Kim
author_sort Juwon Lee
title Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
title_short Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
title_full Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
title_fullStr Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
title_full_unstemmed Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
title_sort room temperature transparent conducting magnetic oxide (tcmo) properties in heavy ion doped oxide semiconductor
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-08-01
description Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.
url http://dx.doi.org/10.1063/1.4994044
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