Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visi...

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Bibliographic Details
Main Authors: Juwon Lee, Ganapathi Subramaniam Nagarajan, Yoon Shon, Younghae Kwon, Tae Won Kang, Deuk Yong Kim, Hyungsang Kim, Hyunsik Im, Chang-Soo Park, Eun Kyu Kim
Format: Article
Language:English
Published: AIP Publishing LLC 2017-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4994044
Description
Summary:Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.
ISSN:2158-3226

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