Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduct...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9292/4/3/586 |