Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

A silver nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V) and impedance spectroscopy (IS) measurements. The I − V results showed that there was...

Full description

Bibliographic Details
Main Authors: Keanchuan Lee, Martin Weis, Takaaki Manaka, Mitsumasa Iwamoto
Format: Article
Language:English
Published: AIP Publishing LLC 2012-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4720399
id doaj-00cd718fb67d4eae93bbbf46efbff75e
record_format Article
spelling doaj-00cd718fb67d4eae93bbbf46efbff75e2020-11-25T02:44:56ZengAIP Publishing LLCAIP Advances2158-32262012-06-0122022128022128-810.1063/1.4720399028202ADVMultiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayerKeanchuan Lee0Martin Weis1Takaaki Manaka2Mitsumasa Iwamoto3Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, JapanInstitute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219, SlovakiaDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, JapanA silver nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V) and impedance spectroscopy (IS) measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.http://dx.doi.org/10.1063/1.4720399
collection DOAJ
language English
format Article
sources DOAJ
author Keanchuan Lee
Martin Weis
Takaaki Manaka
Mitsumasa Iwamoto
spellingShingle Keanchuan Lee
Martin Weis
Takaaki Manaka
Mitsumasa Iwamoto
Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
AIP Advances
author_facet Keanchuan Lee
Martin Weis
Takaaki Manaka
Mitsumasa Iwamoto
author_sort Keanchuan Lee
title Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
title_short Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
title_full Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
title_fullStr Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
title_full_unstemmed Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
title_sort multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-06-01
description A silver nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V) and impedance spectroscopy (IS) measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.
url http://dx.doi.org/10.1063/1.4720399
work_keys_str_mv AT keanchuanlee multipletrappinginpentacenefieldeffecttransistorswithananoparticlesselfassembledmonolayer
AT martinweis multipletrappinginpentacenefieldeffecttransistorswithananoparticlesselfassembledmonolayer
AT takaakimanaka multipletrappinginpentacenefieldeffecttransistorswithananoparticlesselfassembledmonolayer
AT mitsumasaiwamoto multipletrappinginpentacenefieldeffecttransistorswithananoparticlesselfassembledmonolayer
_version_ 1724765117080403968

Similar Items