Semiconductor to metal transition in the solids/melts of Te and pseudo-binary of Hg1−xCdxTe for x = 0, 0.1, and 0.2
This paper reports the experimentally measured thermal and electrical conductivities from which the Lorenz numbers as functions of temperature were derived for the solids and melts of elemental Te and samples of Hg1−xCdxTe of x = 0, 0.1, and 0.2. The structural changes in the vicinity of the solid–l...
Main Author: | Ching-Hua Su |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2021-04-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0043779 |
Similar Items
-
Hg1-xCdxTe點缺陷之研究
by: ZHAN, SHEN, et al. -
Hg1-xCdxTe點缺陷之研究
by: ZHAN, SHEN, et al. -
Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe
by: Zhao, Wei
Published: (2007) -
Properties of arsenic–implanted Hg1-xCdxTe MBE films
by: Izhnin Igor I., et al.
Published: (2017-01-01) -
Gold plasmonic material for enhanced Hg1–xCdxTe infrared absorption
by: Naresh C. Das, et al.
Published: (2019-10-01)