Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Abstract Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be int...

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Bibliographic Details
Main Authors: Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen
Format: Article
Language:English
Published: SpringerOpen 2020-06-01
Series:Nanoscale Research Letters
Subjects:
Tunnel field-effect transistors
Double-gate
Step channel thickness
Ambipolar current
TCAD simulation
Online Access:http://link.springer.com/article/10.1186/s11671-020-03360-7

Internet

http://link.springer.com/article/10.1186/s11671-020-03360-7

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