Scaling of Hall coefficient in Co-Bi granular thin films

A series of Co-Bi thin films with Co concentrations c=0, 0.05, 0.2, 0.26, 0.3, 0.333, 0.375, 0.545, were grown by magnetron sputtering on Si(100)/SiNX substrates. Resistivity measurements at zero field (ρxx) as a function of temperature-T exhibit an exponential variation with T in the region of 240K...

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Bibliographic Details
Main Authors: Speliotis Th., Christides C., Athanasopoulos P.
Format: Article
Language:English
Published: EDP Sciences 2013-01-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20134012002
Description
Summary:A series of Co-Bi thin films with Co concentrations c=0, 0.05, 0.2, 0.26, 0.3, 0.333, 0.375, 0.545, were grown by magnetron sputtering on Si(100)/SiNX substrates. Resistivity measurements at zero field (ρxx) as a function of temperature-T exhibit an exponential variation with T in the region of 240K<T<300K. The Hall coefficient as a function of Co concentration diverges as log|c-0.3|0.3 for c<0.333, indicating a scaling of RH nearby a percolation threshold pc=0.3. Only after proper scaling of the anomalous Hall coefficient RS the conventional RS∝(ρxx)n dependence can be satisfied.
ISSN:2100-014X