LEADER 03609namaa2200961uu 4500
001 doab95892
003 oapen
005 20230105
006 m o d
007 cr|mn|---annan
008 230105s2022 xx |||||o ||| 0|eng d
020 |a 9783036561677 
020 |a 9783036561684 
020 |a books978-3-0365-6167-7 
024 7 |a 10.3390/books978-3-0365-6167-7  |2 doi 
040 |a oapen  |c oapen 
041 0 |a eng 
042 |a dc 
072 7 |a PH  |2 bicssc 
720 1 |a Kogan, Eugene  |4 edt 
720 1 |a Kogan, Eugene  |4 oth 
245 0 0 |a Graphene for Electronics 
260 |a Basel  |b MDPI - Multidisciplinary Digital Publishing Institute  |c 2022 
300 |a 1 online resource (180 p.) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
506 0 |a Open Access  |f Unrestricted online access  |2 star 
520 |a Graphene is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional (2D) honeycomb lattice. Graphene's unique properties of thinness and conductivity have led to global research into its applications as a semiconductor. With the ability to well conduct electricity at room temperature, graphene semiconductors could easily be implemented into the existing semiconductor technologies and, in some cases, successfully compete with the traditional ones, such as silicon. This reprint presents very recent results in the physics of graphene, which can be important for applying the material in electronics. 
540 |a Creative Commons  |f https://creativecommons.org/licenses/by/4.0/  |2 cc  |u https://creativecommons.org/licenses/by/4.0/ 
546 |a English 
650 7 |a Physics  |2 bicssc 
653 |a angle-resolved photoemission 
653 |a augmented plane waves 
653 |a band structure 
653 |a borophene 
653 |a Bose-Einstein condensation 
653 |a circulating system 
653 |a conductive ink 
653 |a CVD graphene 
653 |a dephasing 
653 |a dipolar exitons 
653 |a Dirac fermions 
653 |a electric field 
653 |a electron scattering 
653 |a electronic transport in graphene 
653 |a first-principle 
653 |a GB distribution 
653 |a grain boundary (GB) 
653 |a grain size 
653 |a graphene 
653 |a graphene nanosheets 
653 |a graphene solution 
653 |a image potential 
653 |a image-plane position 
653 |a image-potential states 
653 |a inkjet printing 
653 |a ion-selective field-effect transistor 
653 |a Klein tunneling 
653 |a liquid conductor 
653 |a low-dimensional semimetals 
653 |a mechanochemistry 
653 |a microfluidic channel 
653 |a n/a 
653 |a nanoscroll 
653 |a optical power 
653 |a polycrystalline 
653 |a printed electronics 
653 |a quantum hall effect 
653 |a real-time monitoring 
653 |a relaxation time 
653 |a scattering 
653 |a sheet resistance 
653 |a single-crystalline grain 
653 |a sodium ions 
653 |a superfluidity 
653 |a temperature 
653 |a tight-binding model 
653 |a transmission-line model measurement 
653 |a valence charge density 
793 0 |a DOAB Library. 
856 4 0 |u https://directory.doabooks.org/handle/20.500.12854/95892  |7 0  |z Open Access: DOAB: description of the publication 
856 4 0 |u https://mdpi.com/books/pdfview/book/6549  |7 0  |z Open Access: DOAB, download the publication