Nanotechnology for Electronic Materials and Devices
Electronics nanotechnology represents a multidisciplinary field with a very broad range of applications used to address different challenges. This reprint, through eleven original research articles, aims to acknowledge recent developments related to the fabrication and applications of nanomaterials:...
| Format: | eBook |
|---|---|
| Language: | English |
| Published: |
Basel
MDPI - Multidisciplinary Digital Publishing Institute
2023
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| Subjects: | |
| Online Access: | Open Access: DOAB: description of the publication Open Access: DOAB, download the publication |
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| 720 | 1 | |a Fiorenza, Patrick |4 edt | |
| 720 | 1 | |a Eriksson, Jens |4 edt | |
| 720 | 1 | |a Eriksson, Jens |4 oth | |
| 720 | 1 | |a Fiorenza, Patrick |4 oth | |
| 720 | 1 | |a Lo Nigro, Raffaella |4 edt | |
| 720 | 1 | |a Lo Nigro, Raffaella |4 oth | |
| 720 | 1 | |a Pécz, Béla |4 edt | |
| 720 | 1 | |a Pécz, Béla |4 oth | |
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| 520 | |a Electronics nanotechnology represents a multidisciplinary field with a very broad range of applications used to address different challenges. This reprint, through eleven original research articles, aims to acknowledge recent developments related to the fabrication and applications of nanomaterials: synthesis, characterization, and device fabrication. | ||
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| 653 | |a atomic layer deposition | ||
| 653 | |a boxcar averaging | ||
| 653 | |a C-AFM | ||
| 653 | |a combinatorial approach | ||
| 653 | |a contact resistance | ||
| 653 | |a crystallization of silicon | ||
| 653 | |a CVD growth | ||
| 653 | |a double gate | ||
| 653 | |a dual-gate | ||
| 653 | |a electrical performance | ||
| 653 | |a ferromagnetism | ||
| 653 | |a FET | ||
| 653 | |a GaN | ||
| 653 | |a hafnium oxide | ||
| 653 | |a iron oxide | ||
| 653 | |a metal oxides | ||
| 653 | |a Moiré fringes | ||
| 653 | |a monolayer MoS2 | ||
| 653 | |a MoS2 | ||
| 653 | |a multilayers | ||
| 653 | |a n/a | ||
| 653 | |a nanolaminates | ||
| 653 | |a phase transition | ||
| 653 | |a photoluminescence | ||
| 653 | |a power-MOSFET | ||
| 653 | |a radio-frequency transistors | ||
| 653 | |a Raman | ||
| 653 | |a resistive switching | ||
| 653 | |a scanning capacitance microscopy | ||
| 653 | |a scanning microwave impedance microscopy | ||
| 653 | |a scanning near-field microwave microscopy | ||
| 653 | |a scanning nonlinear dielectric microscopy | ||
| 653 | |a scanning probe microscopy | ||
| 653 | |a Sm doping | ||
| 653 | |a spectroscopic ellipsometry | ||
| 653 | |a Sub-2 nm technology | ||
| 653 | |a sulfurization | ||
| 653 | |a TEM | ||
| 653 | |a thermal oxidation | ||
| 653 | |a thermochromism | ||
| 653 | |a TMD | ||
| 653 | |a transmission electron microscopy | ||
| 653 | |a WS2 | ||
| 653 | |a XPS | ||
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