Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

by Schiz, J.F.W, Lamb, Andrew C., Cristiano, Fuccio, Bonar, J.M, Ashburn, Peter, Hall, Stephen, Hemment, Peter L. F.
Published 2001

Reduction of Parasitic Capacitance in Vertical MOSFETs by Spacer Local Oxidation

by Kunz, V Dominik, Uchino, Takashi, de Groot, C.H. (Kees), Ashburn, Peter, Donaghy, David C, Hall, Steven, Wang, Yun, Hemment, Peter L F
Published 2003