Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

by Mitchell, MJ, Ashburn, P, Hemment, P L F
Published 2002

Comparison of arsenic diffusion in Si_1-xGe_x formed by epitaxy and Ge+ implantation

by Mitchell, M J, Ashburn, P, Bonar, J M, Hemment, P L F
Published 2003

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

by El Mubarek, H.A.W, Wang, Y., Price, R., Bonar, J.M, Zhang, J., Hemment, P.L.F, Ashburn, P.
Published 2005

Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications

by Mitrovic, I.Z, Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P.L.F, El Mubarek, H.A.W, Ashburn, P.
Published 2005

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

by Gili, E, Kunz, V D, de Groot, C H, Uchino, T, Ashburn, P, Donaghy, D C, Hall, S, Wang, Y, Hemment, P L F
Published 2004

Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex

by El Mubarek, H.A.W, Karunaratne, M., Bonar, J.M, Dilliway, G.D, Wang, Y., Hemment, P.L.F, Willoughby, A.F, Ashburn, P.
Published 2005

SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

by Bain, M., El Mubarek, H.A.W, Bonar, J.M, Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M, Hemment, P.L.F, Hall, S., Ashburn, P.
Published 2005

Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy

by Waite, A.M, Lloyd, N.S, Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F, Bagnall, D.M, Evans, A.G.R, Ashburn, P.
Published 2005

Effect of fluorine implantation dose on boron thermal diffusion in silicon

by El Mubarek, H.A.W, Bonar, J.M, Dilliway, G.D, Ashburn, P., Karunaratne, M., Willoughby, A.F, Wang, Y., Hemment, P.L.F, Price, R., Zhang, J., Ward, P.
Published 2004