Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor

by H. J. Haugan, K. G. Eyink, A. M. Urbas, D. A. Bas
Published 2021-07-01

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

by W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, G. J. Brown
Published 2015-09-01