A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

by Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès, Filadelfo Cristiano
Published 2018-07-01