Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

by A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy
Published 2018-09-01

Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

by Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee
Published 2018-12-01

Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

by E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton
Published 2020-11-01

Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

by A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton
Published 2019-06-01

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

by A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
Published 2019-05-01

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

by A.Y. Polyakov, Jin-Hyeon Yun, A.S. Usikov, E.B. Yakimov, N.B. Smirnov, K.D. Shcherbachev, H. Helava, Y.N. Makarov, S.Y. Kurin, N.M. Shmidt, O.I. Rabinovich, S.I. Didenko, S.A. Tarelkin, B.P. Papchenko, In-Hwan Lee
Published 2017-03-01