Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics

by Michitaka Yoshino, Yuto Ando, Manato Deki, Toru Toyabe, Kazuo Kuriyama, Yoshio Honda, Tomoaki Nishimura, Hiroshi Amano, Tetsu Kachi, Tohru Nakamura
Published 2019-02-01