Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

by Gouker, Pascale M., Gadlage, Matthew J., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D.
Published 2010

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

by Gouker, Pascale M., Gadlage, Matthew J., Ahlbin, Jonathan R., Ramachandra, Vishwanath, Dinkin, Cody A., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D., McCurdy, Michael W., Alles, Michael L., Reed, Robert A., Mendenhall, Marcus H., Massengill, Lloyd W., Shuler, Robert L., McMorrow, Dale
Published 2010

Scaling Effects on Single-Event Transients in InGaAs FinFETs

by Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A
Published 2020

The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

by Arutt, Charles N, Alles, Michael L, Liao, Wenjun, Gong, Huiqi, Davidson, Jim L, Schrimpf, Ronald D, Reed, Robert A, Weller, Robert A, Bolotin, Kirill, Nicholl, Ryan, Pham, Thang Toan, Zettl, Alex, Li, Mo, Alphenaar, Bruce W, Lin, Ji-Tzuoh, Shurva, Pranoy Deb, McNamara, Shamus, Walsh, Kevin M, Feng, Philip X-L, Hutin, Louis, Ernst, Thomas, Homeijer, Brian D, Polcawich, Ronald G, Proie, Robert M, Jones, Jacob L, Glaser, Evan R, Cress, Cory D, Bassiri-Gharb, Nazanin, Du, Qingyang, Hu, Juejun
Published 2017